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PBSS9110T Datasheet(PDF) 9 Page - NXP Semiconductors |
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PBSS9110T Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 12 page 2004 May 13 9 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T VCE (V) 0 −5 −4 −2 −3 −1 001aaa384 −0.8 −1.2 −0.4 −1.6 −2 IC (A) 0 (1) (2) (8) (10) (9) (3) (6) (7) (4) (5) Fig.13 Collector current as a function of collector-emitter voltage; typical values. (1) IB = 45 mA. (2) IB = 40.5 mA. (3) IB = 36 mA. (4) IB = 31.5 mA. (5) IB = 27 mA. (6) IB = 22.5 mA. (7) IB = 18 mA. (8) IB = 13.5 mA. (9) IB = 9 mA. (10) IB = 4.5 mA. Tamb =25 °C. |
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