PH2625L datasheet(2/13 Pages) PHILIPS

Part #	PH2625L

Description	N-channel TrenchMOS-TM logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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9397 750 14324

Preliminary data sheet

Rev. 02 — 24 February 2005

2 of 13

Philips Semiconductors

PH2625L

N-channel TrenchMOS™ logic level FET

3.

Ordering information

4.

Limiting values

[1]

Duty cycle is limited by the maximum junction temperature.

[2]

Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short

bursts, not every switching cycle.

Table 2:

Ordering information

Type number

Package

Name

Description

Version

PH2625L

LFPAK

plastic single-ended surface mounted package; 4 leads

SOT669

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

25

°C ≤ T

j ≤ 150 °C

-

25

V

VDGR

drain-gate voltage (DC)

25

°C ≤ T

j ≤ 150 °C; RGS =20kΩ

-25

V

VGS

gate-source voltage

-

±20

V

ID

drain current (DC)

Tmb =25 °C; VGS =10V; Figure 2 and 3

-

100

A

Tmb = 100 °C; VGS =10V; Figure 2

-63

A

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3

-

300

A

Ptot

total power dissipation

Tmb =25 °C; Figure 1

-

62.5

W

Tstg

storage temperature

−55

+150

°C

Tj

junction temperature

−55

+150

°C

Source-drain diode

IS

source (diode forward) current (DC) Tmb =25 °C

-

52

A

ISM

peak source (diode forward)

current

Tmb =25 °C; pulsed; tp ≤ 10 µs

-

156

A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

unclamped inductive load; ID =71A;

tp = 0.1 ms; VDD ≤ 25 V; RGS =50 Ω;

VGS = 10 V; starting at Tj =25 °C

-

250

mJ

EDS(AL)R repetitive drain-source avalanche

energy

unclamped inductive load; ID = 7.1 A;

tp = 0.01 ms; VDD ≤ 25 V; RGS =50 Ω;

VGS =10V

[1] [2] -

2.5

mJ

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