AME902NE datasheet(1/5 Pages) ANALOGPOWER

Part #	AME902NE

Description	Dual N-Channel 20-V (D-S) MOSFET

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Manufacturer	ANALOGPOWER [Analog Power]

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Analog Power

AME920NE

Dual N-Channel 20-V (D-S) MOSFET

VDS (V)

ID (A)

11

9

Symbol

Limit

Units

VDS

20

VGS

±12

TA=25°C

11

TA=70°C

9

IDM

40

IS

7

A

TA=25°C

1.5

TA=70°C

1

TJ, Tstg

-55 to 150

°C

Symbol

Maximum

Units

83

120

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

Maximum Junction-to-Ambient

a

Gate-Source Voltage

PRODUCT SUMMARY

20

rDS(on) (mΩ)

9.9 @ VGS = 4.5V

14 @ VGS = 2.5V

Power Dissipation

a

t <= 10 sec

Steady State

RθJA

ID

A

PD

W

Continuous Drain Current

a

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• Power Routing

• Li Ion Battery Packs

• Level Shifting and Driver Circuits

DFN2x3

1

Publication Order Number:

DS_AME920NE_1B

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