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BPV10NF Datasheet(PDF) 2 Page - Vishay Siliconix |
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BPV10NF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page BPV10NF www.vishay.com Vishay Semiconductors Rev. 1.9, 29-May-15 2 Document Number: 81503 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 50 mA VF 1.0 1.3 V Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V Reverse dark current VR = 20 V, E = 0 Iro 15 nA Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 11 pF Open circuit voltage Ee = 1 mW/cm2, = 870 nm VO 450 mV Short circuit current Ee = 1 mW/cm2, = 870 nm IK 50 μA Reverse light current Ee = 1 mW/cm2, = 870 nm, VR = 5 V Ira 55 μA Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 30 60 μA Temperature coefficient of Ira Ee = 1 mW/cm2, = 870 nm, VR = 5 V TKIra -0.1 %/K Absolute spectral sensitivity VR = 5 V, = 870 nm s( )0.55 A/W Angle of half sensitivity ± 20 deg Wavelength of peak sensitivity p 940 nm Range of spectral bandwidth 0.5 790 to 1050 nm Quantum efficiency = 950 nm 70 % Noise equivalent power VR = 20 V, = 950 nm NEP 3 x 10-14 W/ Hz Detectivity VR = 20 V, = 950 nm D* 3 x 1012 cm Hz/W Rise time VR = 50 V, RL = 50 , = 820 nm tr 2.5 ns Fall time VR = 50 V, RL = 50 , = 820 nm tf 2.5 ns 20 40 60 80 1 10 100 1000 T amb - Ambient Temperature (°C) 100 94 8436 V R = 20 V 0 204060 80 0.6 0.8 1.0 1.2 1.4 T amb - Ambient Temperature (°C) 100 94 8621 V R = 5 V E e =1 mW/cm 2 λ = 870 nm |
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