GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

UTV020

2 Watts, 25 Volts, Class A

UHF Television - Band IV & V

GENERAL DESCRIPTION

The UTV 020 is a COMMON EMITTER transistor capable of providing 2

Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold

Metalization and Diffused Ballasting are used to provide high reliability and

supreme ruggedness.

CASE OUTLINE

55FT, STYLE 2

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

17 Watts

o

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

45 Volts

BVceo

Collector to Emitter Voltage

25 Volts

BVebo

Emitter to Base Voltage

4.0 Volts

Ic

Collector Current

1.2 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 150 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

IMD

1

VSWR

1

Power Out - Pk Sync

Power Input

Power Gain

Intermodulation Distortion

Load Mismatch Tolerance

F = 470 - 860 MHz

Vcc = 25 Volts

Ic = 410 mA

Pref = 2.0 Watts

F = 860 MHz

2.0

12

-60

0.2

30:1

Watts

Watts

dB

dB

LVceo

BVces

BVebo

h

FE

Cob

θjc

Collector to Emitter Breakdown

Collector to Base Breakdown

Emitter to Base Breakdown

Current Gain

Output Capacitance

Thermal Resistance

Ic = 40 mA

Ic = 10 mA

Ie = 1 mA

Vce = 5 V, 250mA

Vcb = 20 V, F = 1 MHz

Tc = 25 C

o

26

45

4.0

10

8.0

10

Volts

Volts

Volts

pF

C/W

o

Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz

European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB

Initial Issue June, 1994