T337P6

www.vishay.com

Vishay Semiconductors

Rev. 1.2, 11-May-15

2

Document Number: 84259

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• The measurements are based on samples which are mounted on TO18-header without epoxy coating

Fig. 1 - Diode Capacitance vs. Reverse Voltage

Fig. 2 - Relative Spectral Sensitivity vs. Wavelength without

Epoxy Coating

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Breakdown voltage

60

V

Reverse dark current

< 1

3

nA

Diode capacitance

3.3

pF

1.5

pF

Reverse light current

2.3

μA

2.15

μA

Angle of half sensitivity

ϕ

± 60

deg

Wavelength of peak sensitivity

970

nm

Range of spectral bandwidth

610 to 1080

nm

Rise time

Ω, λ = 950 nm

3500

ns

Fall time

Ω, λ = 950 nm

820

ns

Rise time

Ω, λ = 830 nm

550

ns

Fall time

Ω, λ = 830 nm

100

ns

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.1

1

10

100

V

f = 1 MHz, E = 0

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

400

500

600

700

800

900 1000 1100

λ - Wavelength (nm)