T1112P-SD-F datasheet(2/5 Pages) VISHAY

Part #	T1112P-SD-F

Description	Silicon PIN Photodiode

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Manufacturer	VISHAY [Vishay Siliconix]

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T1112P

www.vishay.com

Vishay Semiconductors

Rev. 1.1, 05-Nov-14

2

Document Number: 84260

For technical questions, contact: optochipsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• The measurements are based on samples of die which are mounted on a TO18-header without resin coating

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Diode Capacitance vs. Reverse Voltage

Fig. 2 - Relative Spectral Sensitivity vs.

Wavelength without Epoxy Coating

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Breakdown voltage

IR = 100 μA, E = 0

V(BR)

60

V

Reverse dark current

VR = 10 V, E = 0

Iro

0.1

5

nA

Diode capacitance

VR = 0 V, f = 1 MHz, E = 0

CD

42

pF

VR = 3 V, f = 1 MHz, E = 0

CD

19

pF

Reverse light current

Ee = 1 mW/cm2,

λ = 890 nm, VR = 5 V

Ira

40

μA

Ee = 1 mW/cm2,

λ = 950 nm, VR = 5 V

Ira

44

μA

Angle of half sensitivity

ϕ

± 60

deg

Wavelength of peak sensitivity

λp

970

nm

Range of spectral bandwidth

λ0.5

640 to 1070

nm

Rise time

VR = 5 V, RL = 50

Ω, λ = 870 nm

tr

130

ns

Fall time

tf

130

ns

Rise time

VR = 5 V, RL = 50

Ω, λ = 950 nm

tr

7μs

Fall time

tf

7μs

0

10.0

20.0

30.0

40.0

0.1

1

10

100

V

R - Reverse Voltage (V)

f = 1 MHz, E = 0

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

400

500

600

700

800

900 1000 1100

λ - Wavelength (nm)

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