 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BSN254 Datasheet(PDF) 5 Page - NXP Semiconductors |
|
||||||||||||||||||||||||||||||
BSN254 Datasheet(HTML) 5 Page - NXP Semiconductors |
|
|
5 / 12 page  2002 Feb 19 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A handbook, halfpage 02 10 VGS (V) 1.6 1.2 0.4 0 0.8 1.4 0.6 0.2 1 46 ID (A) 8 MGU570 Fig.6 Typical transfer characteristics. VDS = 10 V; Tj =25 °C. handbook, halfpage 20 10 5 0 15 MGU571 10−1 110 ID (A) RDSon ( Ω) (1) (2) (3) (4) (5) (6) Fig.7 Drain-source on-state resistance as a function of drain current; typical values. Tj =25 °C. (1) VGS = 2.5 V. (2) VGS =3V. (3) VGS = 3.5 V. (4) VGS =4V. (5) VGS =5V. (6) VGS =10V. handbook, halfpage 250 010 30 0 20 VDS (V) C (pF) 50 100 150 200 MGU572 Ciss Coss Crss Fig.8 Input, output and feedback capacitance as functions of drain-source voltage; typical values. VGS = 0; f = 1 MHz; Tj =25 °C. |
Similar Part No. - BSN254 |
|
Similar Description - BSN254 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
