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BUK7606-75B Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK7606-75B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page Philips Semiconductors BUK75/7606-75B TrenchMOS™ standard level FET Product data Rev. 02 — 20 September 2002 6 of 15 9397 750 10278 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. Source-drain diode VSD source-drain (diode forward) voltage IS = 40 A; VGS =0V; Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = −100 A/µs VGS = −10 V; VDS =30V -86 - ns Qr recovered charge - 253 - nC Table 4: Characteristics…continued Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit |
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