FLEx36TM 3.3V 32K/64K/128K/256K x 36
Synchronous Dual-Port RAM
CY7C0850V/CY7C0851V
CY7C0852V/CY7C0853V
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
, CA 95134
•
408-943-2600
Document #: 38-06070 Rev. *D
Revised June 24, 2004
Features
• True dual-ported memory cells that allow simultaneous
access of the same memory location
• Synchronous pipelined operation
• Organization of 1-Mbit, 2-Mbit, 4-Mbit and 9-Mbit
devices
• Pipelined output mode allows fast operation
• 0.18-micron CMOS for optimum speed and power
• High-speed clock to data access
• 3.3V low power
— Active as low as 225 mA (typ)
— Standby as low as 55 mA (typ)
• Mailbox function for message passing
• Global master reset
• Separate byte enables on both ports
• Commercial and industrial temperature ranges
• IEEE 1149.1-compatible JTAG boundary scan
• 172-ball FBGA (1 mm pitch) (15 mm × 15 mm)
• 176-pin TQFP (24 mm × 24 mm × 1.4 mm)
• Counter wrap around control
— Internal mask register controls counter wrap-around
— Counter-interrupt flags to indicate wrap-around
— Memory block retransmit operation
• Counter readback on address lines
• Mask register readback on address lines
• Dual Chip Enables on both ports for easy depth
expansion
Functional Description
The FLEx36 family includes 1M, 2M, 4M and 9M pipelined,
synchronous, true dual-port static RAMs that are high-speed,
low-power 3.3V CMOS. Two ports are provided, permitting
independent, simultaneous access to any location in memory.
The result of writing to the same location by more than one port
at the same time is undefined. Registers on control, address,
and data lines allow for minimal set-up and hold time.
During a Read operation, data is registered for decreased
cycle time. Each port contains a burst counter on the input
address register. After externally loading the counter with the
initial address, the counter will increment the address inter-
nally (more details to follow). The internal Write pulse width is
independent of the duration of the R/W input signal. The
internal Write pulse is self-timed to allow the shortest possible
cycle times.
A HIGH on CE0 or LOW on CE1 for one clock cycle will power
down the internal circuitry to reduce the static power
consumption. One cycle with chip enables asserted is required
to reactivate the outputs.
Additional features include: readback of burst-counter internal
address value on address lines, counter-mask registers to
control the counter wrap-around, counter interrupt (CNTINT)
flags, readback of mask register value on address lines,
retransmit functionality, interrupt flags for message passing,
JTAG for boundary scan, and asynchronous Master Reset
(MRST).
The CY7C0853 device in this family has limited features.
Please see See “Address Counter and Mask Register
Operations[10]” on page 8. for details.
Table 1. Product Selection Guide
Density
1-Mbit
(32K x 36)
2-Mbit
(64K x 36)
4-Mbit
(128K x 36)
9-Mbit
(256K x 36)
Part Number
CY7C0850V
CY7C0851V
CY7C0852V
CY7C0853V
Max. Speed (MHz)
167
167
167
133
Max. Access Time - clock to Data (ns)
4.0
4.0
4.0
4.7
Typical operating current (mA)
225
225
225
270
Package
176TQFP
172FBGA
176TQFP
172FBGA
176TQFP
172FBGA
172FBGA
CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18
Synchronous Dual-Port RAM
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