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DTC143TET1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # DTC143TET1G
Description  Bias Resistor Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

DTC143TET1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 6
1
Publication Order Number:
DTC114EET1/D
DTC114EET1 Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−75/SOT−416 package which is designed for low power surface
mount applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 Package Can be Soldered Using Wave or
Reflow
The Modified Gull−Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25°C
Derate above 25
°C
PD
200
1.6
mW
mW/
°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA
600
°C/W
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
400
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0
× 1.0 Inch Pad
NPN SILICON
BIAS RESISTOR TRANSISTORS
SC−75/SOT−416
CASE 463
STYLE 1
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
xx = Specific Device Code
M = Date Code
MARKING
DIAGRAM
xx M
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com


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