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DTC143TET1G Datasheet(PDF) 1 Page - ON Semiconductor |
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DTC143TET1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 10 page © Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 6 1 Publication Order Number: DTC114EET1/D DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow • The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die • Available in 8 mm, 7 inch/3000 Unit Tape & Reel • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25 °C PD 200 1.6 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 600 °C/W Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 400 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad NPN SILICON BIAS RESISTOR TRANSISTORS SC−75/SOT−416 CASE 463 STYLE 1 3 2 1 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) PIN 1 BASE (INPUT) R1 R2 xx = Specific Device Code M = Date Code MARKING DIAGRAM xx M See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION http://onsemi.com |
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