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FQB32N20C Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FQB32N20C Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page Rev. A, March 2004 ©2004 Fairchild Semiconductor Corporation 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 N o te s : ※ 1 . Z θ JC ( t ) = 0. 80 /W M a x . ℃ 2 . D u ty F a c to r , D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC (t ) s ingle pu ls e D= 0 .5 0.02 0.2 0.05 0.1 0.01 t 1 , S q uar e W a v e P u l s e D u r a t i o n [ s ec ] 25 50 75 100 125 150 0 5 10 15 20 25 30 T C, Case Temperature [ ] ℃ 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10ms 100 µs DC 1 ms Operation inThis Area is Limited byR DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ 1. V GS = 10 V 2. I D = 14 A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : ※ 1. V GS = 0 V 2. I D = 250 µ A T J, Junction Temperature [ oC] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2 Figure 8. On-Resistance Variation vs Temperature |
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