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GLT41016 Datasheet(PDF) 8 Page - List of Unclassifed Manufacturers

Part # GLT41016
Description  64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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GLT41016 Datasheet(HTML) 8 Page - List of Unclassifed Manufacturers

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G -LINK
GLT41016
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Dec 1998 (Rev 2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 8 -
AC Characteristics
30
35
40
45
Parameter
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
Write Command to RAS Lead Time
tRWL
10
11
12
12
ns
Write Command to CAS Lead Time
tCWL
10
11
12
12
ns
Data Set-Up Time
tDS
0
0
0
0
ns
Data Hold Time
tDH
6
7
8
8
ns
Data Hold Time Referenced to RAS
tDHR
26
31
36
41
ns
RAS to WE Delay Time
tRWD
44
49
54
59
ns
CAS to WE Delay Time
tCWD
22
23
24
24
ns
Column Address to WE Delay Time
tAWD
25
30
32
34
ns
RAS to CAS Precharge Time
tRPC
0
0
0
0
ns
Access Time from CAS Precharge
tCPA
17
20
22
24
ns
EDO Page Mode Cycle Time
tPC
12
13
15
18
ns
EDO Page Mode Read-Modify-Write Cycle Time tPRWC
43
47
50
52
ns
CAS Precharge Time (EDO Page Mode)
tCP
5
5
5
7
ns
RAS Pulse Width (EDO Page Mode Only)
tRASP
30 100k 35 100k 40 100k 45 100k ns
Access Time from OE
tOEA
10
11
12
12
ns
OE to Data Delay Time
tOED
8
8
8
8
ns
OE to Output High-Z
tOEZ
3
8
3
8
3
8
3
8
ns
OE Command Hold Time
tOEH
6
6
7
7
ns
Data Output Hold after CAS low
tDOH
3
3
3
5
ns
RAS to Output High-Z
tREZ
3
8
3
8
3
8
3
8
ns
WE to Output High-Z
tWEZ
3
10
3
10
3
10
3
10
ns
OE to CAS Hold Time
tOCH
8
8
8
8
ns
CAS Hold Time to OE
tCHO
8
8
8
8
ns
OE Precharge Time
tOEP
8
8
8
8
ns
CAS Set-Up Time for CAS -before- RAS Cycle
tCSR
10
10
10
10
ns
CAS Hold Time for CAS -before- RAS Cycle
tCHR
10
10
10
10
ns
Transition Time
tT
1.5
50
2
50
2
50
2
50
ns
Refresh Period
tREF
4
4
4
4
ms


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