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IRHM8150 Datasheet(PDF) 3 Page - International Rectifier |
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IRHM8150 Datasheet(HTML) 3 Page - International Rectifier |
3 / 12 page www.irf.com 3 Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation IRHM7150 IRHM7150 IRHM7150 IRHM7150 IRHM7150 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter Parameter Parameter Parameter Parameter 100KRads(Si) 300 to 1000K Rads (Si) U UU UUnits nits nits nits nits Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions Min Min Min Min Min Max Max Max Max Max Min Max Min Max Min Max Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 100 100 V VGS = 0V, ID = 1.0mA V/5JD Gate Threshold Voltage# ➃ 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward 100 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse -100 -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current 25 50 µA VDS=80V, VGS =0V RDS(on) Static Drain-to-Source# ➃ 0.065 0.09 Ω VGS = 12V, ID =21A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source# ➃ 0.065 0.09 Ω VGS = 12V, ID =21A On-State Resistance (TO-254AA) International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics Radiation Characteristics Radiation Characteristics Radiation Characteristics Radiation Characteristics 1. Part number IRHM7150 (JANSR2N7268) 2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268) Fig a. Fig a. Fig a. Fig a. Fig a. Single Event Effect, Safe Operating Area VSD Diode Forward Voltage# ➃ 1.4 1.4 V VGS = 0V, IS = 34A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Table 2. Single Event Effect Safe Operating Area Table 2. Single Event Effect Safe Operating Area Table 2. Single Event Effect Safe Operating Area Table 2. Single Event Effect Safe Operating Area Table 2. Single Event Effect Safe Operating Area Ion LET Ion LET Ion LET Ion LET Ion LET Energy Range Energy Range Energy Range Energy Range Energy Range VDS(V) VDS(V) VDS(V) VDS(V) VDS(V) MeV/(mg/cm )) (MeV) (µm) @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V Cu 28 285 43 100 100 100 80 60 Br 36.8 305 39 100 90 70 50 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 VGS Cu Br |
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