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JANSR2N7268 Datasheet(PDF) 1 Page - International Rectifier |
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JANSR2N7268 Datasheet(HTML) 1 Page - International Rectifier |
1 / 12 page Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Parameter Parameter Parameter Parameter Parameter Units Units Units Units Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 34 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 21 IDM Pulsed Drain Current ➀ 136 PD @ TC = 25°C Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 500 mJ IAR Avalanche Current ➀ 34 A EAR Repetitive Avalanche Energy ➀ 15 mJ dv/dt Peak Diode Recovery dv/dt ➂ 5.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 9.3 (Typical) g PD - 90675C Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation International Rectifiers RADHard HEXFET® technol- ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. oC A RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET THRU-HOLE (TO-254AA) THRU-HOLE (TO-254AA) THRU-HOLE (TO-254AA) THRU-HOLE (TO-254AA) THRU-HOLE (TO-254AA) 8/14/01 www.irf.com 1 IRHM7150 IRHM7150 IRHM7150 IRHM7150 IRHM7150 JANSR2N7268 JANSR2N7268 JANSR2N7268 JANSR2N7268 JANSR2N7268 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL REF: MIL-PRF-19500/603 REF: MIL-PRF-19500/603 REF: MIL-PRF-19500/603 REF: MIL-PRF-19500/603 REF: MIL-PRF-19500/603 RAD Hard RAD Hard RAD Hard RAD Hard RAD Hard HEXFET HEXFET HEXFET HEXFET HEXFET ® TECHNOLOGY TECHNOLOGY TECHNOLOGY TECHNOLOGY TECHNOLOGY Product Summary Product Summary Product Summary Product Summary Product Summary Part Number Radiation Level Part Number Radiation Level Part Number Radiation Level Part Number Radiation Level Part Number Radiation Level R R R R RDS(on) DS(on) DS(on) DS(on) DS(on) IIIIIDDDDD QPL Part Number QPL Part Number QPL Part Number QPL Part Number QPL Part Number IRHM7150 100K Rads (Si) 0.065Ω 34A JANSR2N7268 IRHM3150 300K Rads (Si) 0.065Ω 34A JANSF2N7268 IRHM4150 600K Rads (Si) 0.065Ω 34A JANSG2N7268 IRHM8150 1000K Rads (Si) 0.065Ω 34A JANSH2N7268 Features: Features: Features: Features: Features: ! Single Event Effect (SEE) Hardened ! Low RDS(on) ! Low Total Gate Charge ! Proton Tolerant ! Simple Drive Requirements ! Ease of Paralleling ! Hermetically Sealed ! Ceramic Eyelets ! Light Weight For footnotes refer to the last page TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA |
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