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QPD1004EVB1 Datasheet(PDF) 10 Page - TriQuint Semiconductor

Part # QPD1004EVB1
Description  25W, 50V, 30 ??1200 MHz, GaN RF Input-Matched Transistor
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

QPD1004EVB1 Datasheet(HTML) 10 Page - TriQuint Semiconductor

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QPD1004
25W, 50V, 30
– 1200 MHz, GaN RF Input-Matched Transistor
Rev. C
- 10 of 20 -
Disclaimer: Subject to change without notice
© 2017 Qorvo
www.qorvo.com
Typical Performance
– Load Pull Drive-up
Notes:
1.
Pulsed signal with 100 us pulse width and 10 % duty cycle, Vd = 50 V, IDQ = 50 mA
2.
See page 15 for load pull and source pull reference planes where the performance was measured.
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Output Power [dBm]
Gain and PAE vs. Output Power
0.6 GHz - Power Tuned
Zs(1fo) = 50.77-18.23i
Zs(2fo) = 97.01+11.6i
Zl(1fo) = 25.2+7.76i
Zl(2fo) = 23.15-10.04i
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Output Power [dBm]
Gain and PAE vs. Output Power
0.6 GHz - Efficiency Tuned
Zs(1fo) = 50.77-18.23i
Zs(2fo) = 97.01+11.6i
Zl(1fo) = 33.95+36.62i
Zl(2fo) = 24.31-9.64i
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Output Power [dBm]
Gain and PAE vs. Output Power
0.8 GHz - Power Tuned
Zs(1fo) = 52.3-10.19i
Zs(2fo) = 15.47-17.6i
Zl(1fo) = 25.28+7.72i
Zl(2fo) = 21.41-12.12i
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Output Power [dBm]
Gain and PAE vs. Output Power
0.8 GHz - Efficiency Tuned
Zs(1fo) = 52.3-10.19i
Zs(2fo) = 15.47-17.6i
Zl(1fo) = 35.71+22.97i
Zl(2fo) = 21.47-12.28i
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Output Power [dBm]
Gain and PAE vs. Output Power
1 GHz - Power Tuned
Zs(1fo) = 41.9-11.87i
Zs(2fo) = 21.55-32.61i
Zl(1fo) = 20.89+9.67i
Zl(2fo) = 41.66-17.91i
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Output Power [dBm]
Gain and PAE vs. Output Power
1 GHz - Efficiency Tuned
Zs(1fo) = 41.9-11.87i
Zs(2fo) = 21.55-32.61i
Zl(1fo) = 28.67+23.31i
Zl(2fo) = 38.32-15.7i
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