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QPD1013SR Datasheet(PDF) 11 Page - TriQuint Semiconductor |
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QPD1013SR Datasheet(HTML) 11 Page - TriQuint Semiconductor |
11 / 25 page QPD1013 150W, 65V, DC – 2.7 GHz, GaN RF Transistor Rev. A - 11 of 25 - Disclaimer: Subject to change without notice © 2017 Qorvo www.qorvo.com Load Pull Smith Charts1, 2 Notes: 1. Vd = 65 V, IDQ = 240 mA, Pulsed signal with 100 us pulse width and 10 % duty cycle. 2. See page 20 for load pull and source pull reference planes. 2.3GHz, Load-pull 52.1 51.9 51.7 51.5 51.3 51.1 16.5 16 15.5 15 14.5 57.1 55.1 53.1 51.1 49.1 Max Power is 52.3dBm at Z = 4.171-3.096i = -0.347-0.2943i Max Gain is 16.6dB at Z = 2.579-0.122i = -0.5898-0.0154i Max PAE is 57.6% at Z = 2.749-1.087i = -0.5574-0.1328i Zo = 10 3dB Compression Referenced to Peak Gain Zs(fo) = 2.54-8.65i Zs(2fo) = 23.67+10.31i Zs(3fo) = 16.2-12.59i Zl(2fo) = 3.77-7.53i Zl(3fo) = NaN Power Gain PAE |
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