Switching Diodes

180

Silicon epitaxial planar type

For switching circuits

I Features

• Short reverse recovery time t

rr

• Small terminal capacitance, C

t

I Absolute Maximum Ratings T

1 : Anode

2 : Cathode

3 : Anode

NS-B1 Package

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage

MA3V175E

40

V

(DC)

MA3V176E

80

Peak reverse

MA3V175E

40

V

voltage

MA3V176E

80

Forward current

Single

100

mA

(DC)

Double

150

Peak forward

Single

225

mA

current

Double

340

Non-repetitive peak

Single

500

mA

750

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Internal Connection

Note) * : t = 1 s

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

MA3V175E

0.1

µA

MA3V176E

0.1

Forward voltage (DC)

1.2

V

Reverse voltage (DC)

MA3V175E

µA40

V

MA3V176E

80

Terminal capacitance

4

pF

3

ns

I Electrical Characteristics T

°C

Note) 1. Rated input/output frequency: 100 MHz

1

3

2

0.75 max.

0.45

(2.5) (2.5)

23

1

+0.20

–0.10

0.45

+0.20

–0.10

Input Pulse

Output Pulse

Sampling

Oscilloscope

R

DUT

R

V

= V

I

F

t

r

t

P

t

rr

t

I

I

F

0

10%

90%

t

t

δ = 0.05

I

V

R

Note) The part numbers in the parenthesis show conventional part number.