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QPD1025LS2 Datasheet(PDF) 5 Page - TriQuint Semiconductor |
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QPD1025LS2 Datasheet(HTML) 5 Page - TriQuint Semiconductor |
5 / 18 page QPD1025L 1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor Datasheet Rev. B │ Subject to change without notice - 5 of 18 - www.qorvo.com Measured Load-Pull Smith Charts 1, 2, 3 Notes: 1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C. 2. The performance shown below is for only half of the device out of the two independent amplification paths. 3. See page 13 for load pull reference planes where the performance was measured. 1.1GHz, Load-pull 58.9 58.7 58.5 58.3 58.1 57.9 57.7 57.5 20.1 19.6 19.1 18.6 18.1 17.6 63.9 65.9 67.9 69.9 71.9 73.9 75.9 • Max Power is 59dBm at Z = 2.53+0.746i = -0.0655+0.1438i • Max Gain is 20.4dB at Z = 1.111+1.709i = -0.2444+0.5171i • Max PAE is 76.9% at Z = 2.221+1.322i = -0.08+0.2735i Zo = 3 3dB Compression Referenced to Peak Gain Zs(fo) = 0.94-2.29i Zs(2fo) = 0.47-0.06i Zs(3fo) = 0.52+0.8i Zl(2fo) = 0.8+0.69i Zl(3fo) = NaN Power Gain PAE |
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