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QPD1025LS2 Datasheet(PDF) 5 Page - TriQuint Semiconductor

Part # QPD1025LS2
Description  1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

QPD1025LS2 Datasheet(HTML) 5 Page - TriQuint Semiconductor

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QPD1025L
1500 W, 65 V, 1.0
– 1.1 GHz, GaN RF Input-Matched Transistor
Datasheet Rev. B
│ Subject to change without notice
- 5 of 18 -
www.qorvo.com
Measured Load-Pull Smith Charts 1, 2, 3
Notes:
1.
Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.
2.
The performance shown below is for only half of the device out of the two independent amplification paths.
3.
See page 13 for load pull reference planes where the performance was measured.
1.1GHz, Load-pull
58.9
58.7
58.5
58.3
58.1
57.9
57.7
57.5
20.1
19.6
19.1
18.6
18.1
17.6
63.9
65.9
67.9
69.9
71.9
73.9
75.9
Max Power is 59dBm
at Z = 2.53+0.746i
= -0.0655+0.1438i
Max Gain is 20.4dB
at Z = 1.111+1.709i
= -0.2444+0.5171i
Max PAE is 76.9%
at Z = 2.221+1.322i
= -0.08+0.2735i
Zo = 3
3dB Compression Referenced to Peak Gain
Zs(fo) = 0.94-2.29i
Zs(2fo) = 0.47-0.06i
Zs(3fo) = 0.52+0.8i
Zl(2fo) = 0.8+0.69i
Zl(3fo) = NaN
Power
Gain
PAE


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