HVVi Semiconductors, Inc.

ISO 9001:2000 Certified

EG-01-DS15A

07/15/2010

Phoenix, Az. 85044

© 2009 HVVi Semiconductors, Inc. All Rights Reserved.

6

H V V1011-600 High Voltage, High Ruggedness

L-Band High Power Pulsed Transistor

1030/1090 MHz, 50µs Pulse, 2% Duty

For TCAS, IF F and Mode-S Applications

Typical device performance under Class AB mode of operation at 1090MHz and RF pulse conditions of 50µs

shows less than 2dB of power degradation over an extreme case teperature rise of 125°C.

Measured at P1dB Compression Point

TEMP

Gain (dB) Power (W) Power (dBm)

-40C

18.7

787

59.0

0C

17.9

802

59.0

25C

17.4

733

58.7

85C

16.6

580

57.6

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