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399-1236-2-ND Datasheet(PDF) 5 Page - Advanced Semiconductor |
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399-1236-2-ND Datasheet(HTML) 5 Page - Advanced Semiconductor |
5 / 9 page HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS18A 10235 S. 51 st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/15/2010 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 5 HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty For Airborne DME Applications ! ! ! !!!!!!!!!!!! ! Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W. ! !!!!!!!!!!!! ! Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W. |
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