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100B2R4JP500X Datasheet(PDF) 1 Page - Advanced Semiconductor |
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100B2R4JP500X Datasheet(HTML) 1 Page - Advanced Semiconductor |
1 / 5 page ! Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10 s and pulse duty cycle = 1%. The high power HVV1012- 50 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage MOSFET technology produces over 50W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. Device Part Number: HVV1012- 50 Evaluation Kit Part Number: HVV1012- 50-EK ORDERING INFORMATION DESCRIPTION TYPICAL PERFORMANCE FEATURES REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM Specifications are subject to change without notice. MODE FREQUENCY VDD IDQ Power GAIN EFFICIENCY IRL (MHz) (V) (mA) (W) (dB) (%) (dB) Class AB 1150 50 100 250 19.5 48 20:1 2 2 2 2 GE PACKAGE |
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