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J152-ND Datasheet(PDF) 6 Page - Advanced Semiconductor |
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J152-ND Datasheet(HTML) 6 Page - Advanced Semiconductor |
6 / 9 page HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS18A 10235 S. 51 st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/15/2010 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 6 HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty For Airborne DME Applications Typical device performance under Class AB mode of operation at 1090MHz and RF pulse conditions of 10µs pulse width and 1% duty cycle with VDD = 50 V and IDQ = 100mA. The high voltage silicon vertical technology shows less than 1.5dB of power degradation over an extreme case teperature rise of 125°C. Measured at P1dB Compression Point TEMP Gain (dB) Power (W) Power (dBm) -40C 19.5 622 57.9 0C 18.9 695 58.4 25C 18.1 681 58.3 85C 15.7 561 57.5 ! W--9:9G377:!(+*`&*$)04+!&d+*!I+$E+*),.*+ |
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