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BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

MDS170L

170 Watts, 36 Volts, Pulsed

Avionics 1030/1090 MHz

GENERAL DESCRIPTION

The MDS170L is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1030 - 1090 MHz. The

transistor includes input and output prematch for broadband performance. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. Low thermal resistance Solder Sealed Package reduces

junction temperature, extends life.

CASE OUTLINE

55KT, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

350 Watts

o2

Maximum Voltage and Current

BVces

Collector to Base Voltage

50 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

15 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 200 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

η

c

VSWR

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 1030 - 1090 MHz

Vcc = 36 Volts

PW = Note 1

DF = Note 1

F = 1030 MHz

170

7

40

34

10:1

Watts

Watts

dB

%

BVebo

BVces

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC - Current Gain

Thermal Resistance

Ie = 20 mA

Ic = 20 mA

Ic = 20 mA, Vce = 5 V

20

0.5

Volts

Volts

C/W

o

Note 1: MODE- S Pulse Burst, 120

µs at 50% Duty, Long term duty = 5%.

2: At rated pulse conditions

Initial Issue January, 1996