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J152-ND Datasheet(PDF) 2 Page - Advanced Semiconductor |
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J152-ND Datasheet(HTML) 2 Page - Advanced Semiconductor |
2 / 5 page ELECTRICAL CHARACTERISTICS PULSE CHARACTERISTICS THERMAL CHARACTERISTICS RUGGEDNESS PERFORMANCE 1 NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10% point of the pulse with pulse width = 10 sec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broad- band matched test xture. 2 NOTE: Amount of gate voltage required to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=48V - 50 200 A IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 A GP1 Power Gain F=1150MHz 17.5 19.5 - dB IRL1 Input Return Loss F=1150MHz - -7 -4 dB D1 F=1150MHz 46 48 - % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=100mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300 A 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Unit Tr1 Rise Time F=1150MHz - <40 50 nS Tf1 Fall Time F=1150MHz - <15 50 nS PD1 Pulse Droop F=1150MHz - 0.25 0.5 dB |
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