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P242393 Datasheet(PDF) 2 Page - Advanced Semiconductor

Part # P242393
Description  All Gold Bonding Scheme
Download  8 Pages
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Manufacturer  ASI [Advanced Semiconductor]
Direct Link  http://www.advancedsemiconductor.com
Logo ASI - Advanced Semiconductor

P242393 Datasheet(HTML) 2 Page - Advanced Semiconductor

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HVVi Semiconductors, Inc.
ISO 9001:2000 Certified
EG-01-PO22X1
10235 S. 51
st St. Suite 100
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
1/5/10
Phoenix, Az. 85044
© 2010 HVVi Semiconductors, Inc. All Rights Reserved.
2
HVV1214-140 (Preliminary Datasheet)
L-Band Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty Cycle
For Ground Based Radar Applications
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The HVV1214-140 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at
rated output power and nominal operating voltage across the frequency band of operation.
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Notes:
1) Rated at TCASE = 25°C
2) All parameters measured under pulsed conditions at 140W output power measured at the 10% point of the pulse with
pulse width = 200µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
3) Amount of gate voltage required to attain nominal quiescent current.
4) Guaranteed by design.
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PULSE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATING (IEC 134)
THERMAL/RUGGEDNESS PERFORMANCE


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