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10-F007NRA050SG-P966F09 Datasheet(PDF) 4 Page - Vincotech |
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10-F007NRA050SG-P966F09 Datasheet(HTML) 4 Page - Vincotech |
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4 / 29 page  10-F007NRA050SG-P966F09 datasheet Parameter Symbol Unit V GE [V] V GS [V] V r [V] V CE [V] V DS [V] I C [A] I F [A] I D [A] T j [°C] Min Typ Max Characteristic Values Value Conditions 25 1,6 2,06 2,3 125 2,14 25 44 125 45 25 5 125 8 25 148 125 192 25 71 125 110 25 0,37 125 0,63 25 1,25 125 1,93 Thermal resistance junction to sink R th(j-s) 0,94 Thermal resistance junction to case R th(j-c) 0,62 25 1,60 2,01 2,60 125 1,66 Thermal resistance junction to sink R th(j-s) 1,92 Thermal resistance junction to case R th(j-c) 1,27 25 2 2,30 2,9 125 2,40 25 65 125 67 25 43 125 122 25 2,24 125 4,25 25 5361 125 3861 25 0,59 125 1,18 Thermal resistance junction to sink R th(j-s) 1,56 Thermal resistance junction to case R th(j-c) 1,03 25 5 5,8 6,5 V mWs Ω K/W 25 Ω 25 60 ns A μA µC K/W 35 V 25 0,005 120 25 1950 Turn-on energy loss Boost Switch Gate-emitter leakage current Turn-off delay time Collector-emitter saturation voltage Collector-emitter cut-off incl diode Turn-on delay time Rise time Fall time Gate emitter threshold voltage Integrated Gate resistor E off Gate charge Input capacitance Output capacitance C rss C oss C ies Reverse transfer capacitance Turn-off energy loss Boost Diode Diode forward voltage V F Reverse current I r t d(off) t r t d(on) R gint I GES V GE(th) 0,0012 +4,5 7 25 K/W mWs A/µs ns pF 21511 250 mW/K % mW 100 210 3,5 -4,5 tbd. 115 25 25 nC R 100 = 1486 Ω 155 35 Power dissipation constant Power dissipation P 25 25 Δ R/R Rated resistance R Deviation of R 100 Thermistor phase-change material λ = 3,4 W/mK phase-change material λ = 3,4 W/mK ±15 R gon = 4 Ω 20 0 480 15 0 0 15 none R gon = 4 Ω ±15 I RRM Reverse recovery energy t rr Q rr E rec Reverse recovery time Peak rate of fall of recovery current Peak reverse recovery current Reverse recovered charge ( di rf/dt )max Diode forward voltage V CE = V GE R goff = 4 Ω Thermal grease thickness≤50um λ = 1 W/mK t f I CES V CEsat Reverse leakage current V F I r f = 1 MHz E on Boost Sw. Protection Diode Q G 1200 25 350 35 1200 350 25 35 B-value B (25/50) B-value B (25/100) Tol. ±1% 25 25 E Vincotech NTC Reference K μA mA nA V V K 3884 3964 1200 copyright Vincotech 4 20 Jun. 2016 / Revision 2 |
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