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QPB1500PCB4B01 Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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QPB1500PCB4B01 Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 14 page QPB1500 Ku-Band 25 W GaN Power Amplifier Data Sheet Rev. A, June 26, 2017 - 2 of 14 - www.qorvo.com Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 29.5 V Gate Voltage Range (VG) −5 to 0 V Drain Current (ID) 7.2 A Gate Current (IG) See plot page 3 Power Dissipation (PDISS), 85 °C 80 W Input Power (PIN) CW, 50 , VD = +28 V, IDQ = 450 mA, 85 °C 34 dBm Input Power (PIN), CW, VSWR 3:1, VD = +28 V, IDQ = 450 mA, 85 °C 31 dBm Channel Temperature (TCH) 275 °C Mounting Temperature (30 Seconds) 260 °C Storage Temperature −55 to 150 °C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value / Range Drain Voltage (VD) 28 V Drain Current (IDQ) 450 mA Drain Current Under RF Drive (ID_DRIVE) See plots page 6 Gate Voltage (VG) −2.5 V (Typ.) Gate Current Under RF Drive (IG_DRIVE) See plots p. 6 Temperature (TBASE) −40 to 85 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 14.85 15.75 GHz Small Signal Gain 33 dB Input Return Loss 10 dB Output Return Loss 18 dB Output Power (at PIN = 20 dBm) 44.2 dBm Power Added Efficiency (at PIN = 20 dBm) 35.5 % Power Gain (at PIN = 20 dBm) 24.2 dB IM3 @ 30 dBm/Tone -29 dBc Output Power Temperature Coefficient (25 °C to 85 °C only, PIN = 20 dBm) −0.024 dBm/°C Test conditions unless otherwise noted: 25 °C, VD = +20 V, IDQ = 560 mA, VG = −2.5 V typical. |
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