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AMC1106E05DWVR Datasheet(PDF) 4 Page - Texas Instruments |
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AMC1106E05DWVR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 38 page 4 AMC1106E05, AMC1106M05 SBAS789 – OCTOBER 2017 www.ti.com Product Folder Links: AMC1106E05 AMC1106M05 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings (1) MIN MAX UNIT Supply voltage, AVDD to AGND or DVDD to DGND –0.3 6.5 V Analog input voltage at AINP, AINN AGND – 6 AVDD + 0.5 V Digital output voltage at DOUT, or digital input voltage on CLKIN DGND – 0.5 DVDD + 0.5 V Input current to any pin except supply pins –10 10 mA Junction temperature, TJ 150 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 7.3 Recommended Operating Conditions over operating ambient temperature range (unless otherwise noted) MIN NOM MAX UNIT AVDD Analog (high-side) supply voltage (AVDD to AGND) 3.0 5.0 5.5 V DVDD Digital (controller-side) supply voltage (DVDD to DGND) 2.7 3.3 5.5 V TA Operating ambient temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) AMC1106x UNIT DWV (SOIC) 8 PINS RθJA Junction-to-ambient thermal resistance 112.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 47.6 °C/W RθJB Junction-to-board thermal resistance 60.0 °C/W ψJT Junction-to-top characterization parameter 23.1 °C/W ψJB Junction-to-board characterization parameter 60.0 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W 7.5 Power Ratings PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PD Maximum power dissipation (both sides) AMC1106E05, AVDD = DVDD = 5.5 V 91.85 mW AMC1106M05, AVDD = DVDD = 5.5 V 86.90 PD1 Maximum power dissipation (high-side supply) AVDD = 5.5 V 53.90 mW PD2 Maximum power dissipation (low-side supply) AMC1106E05, AVDD = DVDD = 5.5 V 37.95 mW AMC1106M05, AVDD = DVDD = 5.5 V 33.00 |
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