5

DRV5032

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SLVSDC7D – APRIL 2017 – REVISED NOVEMBER 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Power supply voltage

–0.3

5.5

V

Power supply voltage slew rate

Unlimited

V / µs

Output voltage

OUT, OUT1, OUT2

–0.3

V

Output current

OUT, OUT1, OUT2

–5

5

mA

Unlimited

T

105

°C

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±6000

V

Charged-device model (CDM), per JEDEC specification

±750

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Power supply voltage

1.65

5.5

V

Output voltage

0

5.5

V

Output current

–5

5

mA

Operating ambient temperature

–40

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

DRV5032

UNIT

SOT-23 (DBZ)

X2SON (DMR)

3 PINS

4 PINS

Junction-to-ambient thermal resistance

356

159

°C/W

128

77

°C/W

Junction-to-board thermal resistance

94

102

°C/W

Junction-to-top characterization parameter

11.4

0.9

°C/W

Junction-to-board characterization parameter

92

100

°C/W