NTE190 datasheet(2/2 Pages) NTE

Part #	NTE190

Description	Silicon NPN Transistor High Voltage Amplifier

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

ON Characteristics (Note 1)

DC Current Gain

hFE

IC = 10mA, VCE = 10V

40

–

Base–Emitter ON Voltage

VBE(on)

IC = 200mA, VCE = 1V

–

1.0

V

Collector–Emitter Saturation Voltage

VCE(sat) IC = 200mA, IB = 20mA

–

0.5

V

Dynamic Characteristics

Current Gain–Bandwidth Product

fT

IC = 50mA, VCE = 20V,

f = 20MHz

35

–

MHz

Output Capacitance

Cob

VCB = 10V, IE = 0, f = 100kHz

–

12

pF

Input Capacitance

Cib

VBE = 0.5V, IC = 0, f = 100kHz

–

110

pF

Note 1. Pulse Test: Pulse Width

≤ 300µs. Duty Cycle ≤ 2%.

Collector Connected to Tab

EB C

.050 (1.27)

.380 (9.65) Max

.280 (7.25) Max

.128 (3.28) Dia

.200 (5.08)

.218

(5.55)

.160

(4.06)

.475

(12.0)

Min

.995

(25.3)

.100 (2.54)

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