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Q67041-A4713 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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Q67041-A4713 Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 12 page  SGP30N60, SGB30N60 SGW30N60 7Jul-02 10A 20A 30A 40A 50A 60A 70A 0.0mJ 0.5mJ 1.0mJ 1.5mJ 2.0mJ 2.5mJ 3.0mJ 3.5mJ 4.0mJ 4.5mJ 5.0mJ E on* E off E ts* 0 Ω 10 Ω 20 Ω 30 Ω 40 Ω 0.0mJ 0.5mJ 1.0mJ 1.5mJ 2.0mJ 2.5mJ 3.0mJ 3.5mJ 4.0mJ E ts* E on* E off IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150 °C, V CE = 400V, VGE = 0/+15V, RG = 11 Ω, Dynamic test circuit in Figure E) Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150 °C, V CE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E) 0°C 50°C 100°C 150°C 0.0mJ 0.5mJ 1.0mJ 1.5mJ 2.0mJ 2.5mJ 3.0mJ E ts* E on* E off 1µs 10µs 100µs 1ms 10ms 100ms 1s 10 -4K/W 10 -3K/W 10 -2K/W 10 -1K/W 10 0 K/W 0.01 0.02 0.05 0.1 0.2 single pulse D=0.5 Tj, JUNCTION TEMPERATURE tp, PULSE WIDTH Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11 Ω, Dynamic test circuit in Figure E) Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. C 1 = τ 1 / R 1 R 1 R 2 C 2 = τ 2 / R 2 R ,(1 / W ) τ , (s ) = 0.3681 0.0555 0.0938 1.26*10 -3 0.0380 1.49*10 -4 |
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