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TPS2001DDBVR Datasheet(PDF) 11 Page - Texas Instruments |
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TPS2001DDBVR Datasheet(HTML) 11 Page - Texas Instruments |
11 / 26 page IOUT IOS Decreasing Load Resistance VIN 0 A 0 V Slope = -RDS(ON) IOUT IOS Decreasing Load Resistance VIN 0 A 0 V Slope = -RDS(ON) IOC Current Limit with Peaking Flat Current Limit 11 TPS2001D www.ti.com SLVSE25A – JULY 2017 – REVISED OCTOBER 2017 Product Folder Links: TPS2001D Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Feature Description (continued) 8.3.3 Internal Charge Pump The device incorporates an internal charge pump and gate drive circuitry necessary to drive the N-channel MOSFET. The charge pump supplies power to the gate driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The driver incorporates circuitry that controls the rise and fall times of the output voltage to limit large current and voltage surges on the input supply, and provides built-in soft-start functionality. The MOSFET power switch blocks current from OUT to IN when turned off by the UVLO or disabled. 8.3.4 Current Limit The device responds to overloads by limiting output current to the static IOS levels shown in Electrical Characteristics: TJ = TA = 25°C. When an overload condition is present, the device maintains a constant output current, with the output voltage determined by (IOS × RLOAD). Two possible overload conditions can occur. The first overload condition occurs when either: 1. input voltage is first applied, enable is true, and a short circuit is present (load which draws IOUT > IOS) 2. input voltage is present and the TPS2001D is enabled into a short circuit. The output voltage is held near zero potential with respect to ground and the TPS2001D ramps the output current to IOS. The TPS2001D limits the current to IOS until the overload condition is removed or the device begins to thermal cycle. The second condition is when an overload occurs while the device is enabled and fully turned on. The device responds to the overload condition within tIOS (Figure 5 and Figure 6) when the specified overload (see Electrical Characteristics: –40°C ≤ TJ ≤ 125°C) is applied. The response speed and shape varies with the overload level, input circuit, and rate of application. The current limit response will vary between simply settling to IOS, or turnoff and controlled return to IOS. Similar to the previous case, the TPS2001D limits the current to IOS until the overload condition is removed or the device begins to thermal cycle. The TPS2001D thermal cycles if an overload condition is present long enough to activate thermal limiting in any of the above cases. This is due to the relatively large power dissipation [(VIN – VOUT) × IOS] driving the junction temperature up. The device turns off when the junction temperature exceeds 135°C (minimum) while in current limit. The device remains off until the junction temperature cools 20°C and then restarts. There are two kinds of current limit profiles typically available in TI switch products that are similar to the TPS2001D. Many older designs have an output I vs V characteristic similar to the plot labeled Current Limit with Peaking in Figure 20. This type of limiting can be characterized by two parameters, the current limit corner (IOC), and the short circuit current (IOS). IOC is often specified as a maximum value. The TPS2001D family of parts does not present noticeable peaking in the current limit, corresponding to the characteristic labeled Flat Current Limit in Figure 20. This is why the IOC parameter is not present in Electrical Characteristics: –40°C ≤ TJ ≤ 125°C. Figure 20. Current Limit Profiles |
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