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TPS2001D

SLVSE25A – JULY 2017 – REVISED OCTOBER 2017

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Absolute maximum ratings apply over recommended junction temperature range.

(3)

Voltages are with respect to GND unless otherwise noted.

(4)

See Input and Output Capacitance.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2) (3)

MIN

MAX

UNIT

–0.3

6

V

Voltage from IN to OUT

–6

6

V

Internally Limited

–60

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(3)

capacitor was 22 µF) with no device failures.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2000

V

±500

IEC 61000-4-2 contact discharge

±8000

±15000

(1)

Some package and current rating may request an ambient temperature derating of 85°C.

7.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

Input voltage, IN

4.5

5.5

V

Input voltage, EN

0

5.5

V

High-level input voltage, EN

DGK

2

V

DBV

1.8

Low-level input voltage, EN

0.7

V

2

A

Operating junction temperature

–40

125

°C

Sink current into FLT

0

5

mA

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

TPS2001D

TPS2001D

UNIT

DBV

(SOT-23)

DGK

(VSSOP)

5 PINS

8 PINS

Junction-to-ambient thermal resistance

220.4

205.5

°C/W

Junction-to-case (top) thermal resistance

89.7

94.3

°C/W

Junction-to-board thermal resistance

46.9

126.9

°C/W

Junction-to-top characterization parameter

5.2

24.7

°C/W

Junction-to-board characterization parameter

46.2

125.2

°C/W

Junction-to-case (bottom) thermal resistance

—

—

°C/W

See Power DIssipation and Junction Temperature

134.9

110.3

°C/W