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UCC28C40-Q1 Datasheet(PDF) 4 Page - Texas Instruments

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Part # UCC28C40-Q1
Description  Automotive BiCMOS Low-Power Current-Mode PWM Controllers
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

UCC28C40-Q1 Datasheet(HTML) 4 Page - Texas Instruments

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4
UCC28C40-Q1, UCC28C41-Q1, UCC28C42-Q1
UCC28C43-Q1, UCC28C44-Q1, UCC28C45-Q1
SLUSA12B – DECEMBER 2009 – REVISED OCTOBER 2017
www.ti.com
Product Folder Links: UCC28C40-Q1 UCC28C41-Q1 UCC28C42-Q1 UCC28C43-Q1 UCC28C44-Q1 UCC28C45-Q1
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Copyright © 2009–2017, Texas Instruments Incorporated
Pin Functions (continued)
PIN
I/O
DESCRIPTION
NAME
NO.
VREF
8
O
5-V reference voltage. VREF is used to provide charging current to the oscillator timing capacitor through the
timing resistor. It is important for reference stability that VREF is bypassed to GND with a ceramic capacitor
connected as close to the pin as possible. A minimum value of 0.1 µF ceramic is required. Additional VREF
bypassing is required for external loads on VREF.
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to GND pin. Currents are positive into and negative out of the specified terminals.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
Input voltage
VDD
20
V
Input current
IVDD
30
mA
Output drive current (peak)
±1
A
Output energy (capacitive load), EOUT
5
µJ
Analog input voltage
COMP, CS, FB, RT/CT
–0.3
6.3
V
Output driver voltage
OUT
–0.3
20
Reference voltage
VREF
7
Error amplifier output sink current
COMP
10
mA
Total power dissipation at TA = 25°C
D package
50
°C/W
Lead temperature (soldering, 10 s), TLEAD
300
°C
Operating junction temperature, TJ
–40
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002(1)
±2000
V
Charged-device model (CDM), per AEC Q100-011
±750
(1)
TI recommends against operating the device under conditions beyond those specified in this table for extended periods of time.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VVDD
Input voltage
18
V
VOUT
Output driver voltage
18
V
IOUT
Average output driver current(1)
200
mA
IOUT(VREF)
Reference output current(1)
–20
mA
TJ
Operating junction temperature(1)
UCC28C4x-Q1
–40
125
°C


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