Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

Q67040-S4231 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # Q67040-S4231
Description  Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Download  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

Q67040-S4231 Datasheet(HTML) 3 Page - Infineon Technologies AG

  Q67040-S4231 Datasheet HTML 1Page - Infineon Technologies AG Q67040-S4231 Datasheet HTML 2Page - Infineon Technologies AG Q67040-S4231 Datasheet HTML 3Page - Infineon Technologies AG Q67040-S4231 Datasheet HTML 4Page - Infineon Technologies AG Q67040-S4231 Datasheet HTML 5Page - Infineon Technologies AG Q67040-S4231 Datasheet HTML 6Page - Infineon Technologies AG Q67040-S4231 Datasheet HTML 7Page - Infineon Technologies AG Q67040-S4231 Datasheet HTML 8Page - Infineon Technologies AG Q67040-S4231 Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 13 page
background image
SKP06N60
SKB06N60
3
Mar-00
Switching Characteristic, Inductive Load, at Tj=25
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d( o n)
-25
30
Rise time
t r
-18
22
Turn-off delay time
t d( of f)
-
220
264
Fall time
t f
-54
65
ns
Turn-on energy
Eon
-
0.110
0.127
Turn-off energy
Eoff
-
0.105
0.137
Total switching energy
Ets
T j =2 5
°C,
VCC =400V, IC =6A,
VGE =0/15V,
R G =50
Ω,
Energy losses include
“tail” and diode
reverse recovery.
-
0.215
0.263
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
t S
t F
-
-
-
200
17
183
-
-
-
ns
Diode reverse recovery charge
Q rr
-
200
-
nC
Diode peak reverse recovery current
I rr m
-2.8
-
A
Diode peak rate of fall of reverse
recovery current during t b
dirr /d t
T j =2 5
°C,
VR =200 V, IF =6A,
diF/dt =200A/
µs
-
180
-
A/
µs
Switching Characteristic, Inductive Load, at Tj=150
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d( o n)
-24
29
Rise time
t r
-17
20
Turn-off delay time
t d( of f)
-
248
298
Fall time
t f
-70
84
ns
Turn-on energy
Eon
-
0.167
0.192
Turn-off energy
Eoff
-
0.153
0.199
Total switching energy
Ets
T j =150
°C
VCC =400V,
I C =6A,
VGE =0/15V,
R G =50
Ω
Energy losses include
“tail” and diode
reverse recovery.
-
0.320
0.391
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
t S
t F
-
-
-
290
27
263
-
-
-
ns
Diode reverse recovery charge
Q rr
-
500
-
nC
Diode peak reverse recovery current
I rr m
-5.0
-
A
Diode peak rate of fall of reverse
recovery current during t b
dirr /d t
T j =150
°C
VR =200 V, IF =6A,
diF/dt =200A/
µs
-
200
-
A/
µs


Similar Part No. - Q67040-S4231

ManufacturerPart #DatasheetDescription
logo
Infineon Technologies A...		 Q67040-S4231 INFINEON-Q67040-S4231 Datasheet
459Kb / 15P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Jul-02
More results

Similar Description - Q67040-S4231

ManufacturerPart #DatasheetDescription
logo
Infineon Technologies A...		 SKP10N60 INFINEON-SKP10N60 Datasheet
319Kb / 14P		    Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Aug-99
SKP10N60A INFINEON-SKP10N60A_08 Datasheet
368Kb / 14P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Rev. 2.3 Sep 08
SKW15N120 INFINEON-SKW15N120 Datasheet
415Kb / 13P		    FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE
Jul-02
SKW30N60 INFINEON-SKW30N60 Datasheet
393Kb / 13P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Jul-02
SKP15N60 INFINEON-SKP15N60_08 Datasheet
377Kb / 14P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Rev. 2.3 Sep 08
SKP15N60 INFINEON-SKP15N60 Datasheet
450Kb / 14P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Jul-02
SKP02N60 INFINEON-SKP02N60 Datasheet
397Kb / 13P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Jul-02
SKW20N60 INFINEON-SKW20N60 Datasheet
400Kb / 13P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Mar-00
SKP10N60A INFINEON-SKP10N60A Datasheet
438Kb / 14P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Sep-02
SKB02N60 INFINEON-SKB02N60_07 Datasheet
1Mb / 13P		    Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Rev. 2.2 Oct. 07
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com