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Q67040-S4231 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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Q67040-S4231 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 13 page SKP06N60 SKB06N60 3 Mar-00 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time t d( o n) -25 30 Rise time t r -18 22 Turn-off delay time t d( of f) - 220 264 Fall time t f -54 65 ns Turn-on energy Eon - 0.110 0.127 Turn-off energy Eoff - 0.105 0.137 Total switching energy Ets T j =2 5 °C, VCC =400V, IC =6A, VGE =0/15V, R G =50 Ω, Energy losses include “tail” and diode reverse recovery. - 0.215 0.263 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t rr t S t F - - - 200 17 183 - - - ns Diode reverse recovery charge Q rr - 200 - nC Diode peak reverse recovery current I rr m -2.8 - A Diode peak rate of fall of reverse recovery current during t b dirr /d t T j =2 5 °C, VR =200 V, IF =6A, diF/dt =200A/ µs - 180 - A/ µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time t d( o n) -24 29 Rise time t r -17 20 Turn-off delay time t d( of f) - 248 298 Fall time t f -70 84 ns Turn-on energy Eon - 0.167 0.192 Turn-off energy Eoff - 0.153 0.199 Total switching energy Ets T j =150 °C VCC =400V, I C =6A, VGE =0/15V, R G =50 Ω Energy losses include “tail” and diode reverse recovery. - 0.320 0.391 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t rr t S t F - - - 290 27 263 - - - ns Diode reverse recovery charge Q rr - 500 - nC Diode peak reverse recovery current I rr m -5.0 - A Diode peak rate of fall of reverse recovery current during t b dirr /d t T j =150 °C VR =200 V, IF =6A, diF/dt =200A/ µs - 200 - A/ µs |
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