74AHCT1G00GV datasheet(2/16 Pages) PHILIPS

Part #	74AHCT1G00GV

Description	2-input NAND gate

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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2002 May 27

2

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

FEATURES

• Symmetrical output impedance

• High noise immunity

• ESD protection:

– HBM EIA/JESD22-A114-A exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V

– CDM EIA/JESD22-C101 exceeds 1000 V.

• Low power dissipation

• Balanced propagation delays

• Very small 5-pin package

• Output capability: standard

• Specified from −40 to +125 °C.

DESCRIPTION

The 74AHC1G/AHCT1G00 is a high-speed Si-gate CMOS

device.

The 74AHC1G/AHCT1G00 provides the 2-input NAND

function.

QUICK REFERENCE DATA

GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns.

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF

VCC = supply voltage in Volts.

2. The condition is VI = GND to VCC.

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

AHC1G

AHCT1G

tPHL/tPLH

propagation delay A and B to Y

CL = 15 pF; VCC = 5 V

3.5

3.6

ns

CI

input capacitance

1.5

pF

CPD

power dissipation capacitance

CL = 50 pF; f = 1 MHz;

notes 1 and 2

17

18

pF

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74AHCT1G00GV Datasheet(PDF) 2 Page - NXP Semiconductors

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