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JCS2N65C Datasheet(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS2N65C Datasheet(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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4 / 16 page  R JCS2N65C 版本：201603F 4/16 电特性 ELECTRICAL CHARACTERISTICS 开关特性 Switching Characteristics 开启延迟时间 Turn-On delay time td(on) VDD=325V,ID=2.0A,RG=25Ω （note 4，5） - 20.3 50 ns 上升时间 Turn-On rise time tr - 145 220 ns 关断延迟时间 Turn-Off delay time td(off) - 33.3 80 ns 下降时间 Turn-Off Fall time tf - 11.8 45 ns 栅极电荷总量 Total Gate Charge Qg VDS =520V , ID=2.0A VGS=10V （note 4，5） - 8.4 18 nC 栅－源电荷 Gate-Source charge Qgs - 1.6 - nC 栅－漏电荷 Gate-Drain charge Qgd - 3.1 - nC 漏－源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - - 1.9 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 8.0 A 正向压降 Drain-Source Diode Forward Voltage VSD VGS=0V, IS=2.0A - - 1.4 V 反向恢复时间 Reverse recovery time trr VGS=0V, IS=2.0A dIF/dt=100A/μs (note 4) - 284 - ns 反向恢复电荷 Reverse recovery charge Qrr - 1.08 - μC 热特性 THERMAL CHARACTERISTIC 项 目 Parameter 符 号 Symbol 最大 Max 单 位 Unit JCS2N65 VC/RC JCS2N65 TC JCS2N65 FC JCS2N65 CC 结到管壳的热阻 Thermal Resistance, Junction to Case Rth(j-c) 2.87 - 3.22 2.32 ℃/W 结到环境的热阻 Thermal Resistance, Junction to Ambient Rth(j-A) 110 120 39.68 ℃/W 注释： 1：脉冲宽度由最高结温限制 2：L=95mH, IAS=2.0A, VDD=50V, RG=25 Ω,起始结 温TJ=25℃ 3：ISD ≤2A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温 TJ=25℃ 4：脉冲测试：脉冲宽度 ≤300μs,占空比≤2％ 5：基本与工作温度无关 Notes: 1：Pulse width limited by maximum junction temperature 2：L=95mH, IAS=2.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3：ISD ≤2A,di/dt ≤300A/μs,VDD≤BVDSS, Starting TJ=25℃ 4：Pulse Test： Pulse Width ≤300μs,Duty Cycle≤2％ 5：Essentially independent of operating temperature |
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