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JCS2N60FC-O-F2-N-B Datasheet(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS2N60FC-O-F2-N-B Datasheet(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
2 / 16 page R JCS2N60C 版本:201603G 2/16 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 项 目 Parameter 符 号 Symbol 数 值 Value 单 位 Unit JCS2N60 VC/RC JCS2N60 CC JCS2N60 FC JCS2N60 TC 最高漏极-源极直流 电压 Drain-Source Voltage VDSS 600 V 连续漏极电流 Drain Current-continuous ID T=25℃ T=100℃ 1.9 2.0 2.0* A 1.1 1.3 1.3* A 最大脉冲漏极电流(注 1) Drain Current – pulse (note 1) IDM 8.0 8.0* A 最高栅源电压 Gate-Source Voltage VGSS ±30 V 单脉冲雪崩能量(注 2) Single Pulsed Avalanche Energy(note 2) EAS 240 mJ 雪崩电流(注 1) Avalanche Current (note 1) IAR 1.9 A 重复雪崩能量(注 1) Repetitive Avalanche Current (note 1) EAR 4.2 mJ 二极管反向恢复最大 电压变化速率(注 3) Peak Diode Recovery dv/dt (note 3) dv/dt 4.6 V/ns 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃ 44 54 43.9 4 W 0.35 0.43 0.35 0.025 W/℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ,T B STGB -55~+150 ℃ |
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