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JCS4N60FB-O-F-N-B Datasheet(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS4N60FB-O-F-N-B Datasheet(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
4 / 18 page R JCS4N60B 版本:201604I 4/18 电特性 ELECTRICAL CHARACTERISTICS 开关特性 Switching Characteristics 延迟时间 Turn-On delay time td(on) - 16 42 ns 上升时间 Turn-On rise time tr - 49 111 ns 延迟时间 Turn-Off delay time td(off) - 46 102 ns 下降时间 Turn-Off Fall time tf VDD=300V,ID=4.0A,RG=25Ω (note 4,5) - 37 84 ns 栅极电荷总量 Total Gate Charge Qg - 13.3 19 nC 栅-源电荷 Gate-Source charge Qgs - 3.6 - nC 栅-漏电荷 Gate-Drain charge Qgd VDS =480V , ID=4.0A VGS =10V (note 4,5) - 4.9 - nC 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - - 4.0 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 16 A 正向压降 Drain-Source Diode Forward Voltage VSD VGS=0V, IS=4.0A - - 1.4 V 反向恢复时间 Reverse recovery time trr - 330 - ns 反向恢复电荷 Reverse recovery charge Qrr VGS=0V, IS=4.0A dIF/dt=100A/µs (note 4) - 2.67 - µC 热特性 THERMAL CHARACTERISTIC 最大 Max 项 目 Parameter 符 号 Symbol JCS4N60 VB /RB JCS4N60 CB /SB/BB JCS4N6 0FB(TO- 220MF) JCS4N60FB( TO-220MF-K 1/K2) 单位 Unit 结到管壳的热阻 Thermal Resistance, Junction to Case Rth(j-c) 2.50 1.25 2.92 3.49 ℃/W 结到环境的热阻 Thermal Resistance, Junction to Ambient Rth(j-A) 83 62.5 37.6 42.09 ℃/W 注释: 1:脉冲宽度由最高结温限制 2:L=0.5mH, IAS=8.0A, VDD=50V, RG=25 Ω,起始结 温 TJ=25℃ 3:ISD ≤4.0A,di/dt ≤200A/µs,VDD≤BVDSS,起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度 ≤300µs,占空比≤2% 5:基本与工作温度无关 Notes: 1:Pulse width limited by maximum junction temperature 2:L=0.5mH, IAS=8.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3 : ISD ≤4.0A,di/dt ≤200A/µs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test: Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature |
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