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EMIF04-10006F1 Datasheet(PDF) 2 Page - STMicroelectronics |
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EMIF04-10006F1 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 6 page  EMIF04-10006F1 2/6 Symbol Parameter and test conditions Value Unit PR DC power per resistance 0.1 W PT Total DC power per package 0.6 W Tj Maximum junction temperature 125 °C Top Operating temperature range -40 to + 85 °C Tstg Storage temperature range 125 °C ABSOLUTE RATINGS (limiting values) Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input and Output Cline Input capacitance per line ELECTRICAL CHARACTERISTICS (Tamb =25°C) I V IF VF IRM IR IPP VRM VBR VCL Symbol Test conditions Min. Typ. Max. Unit VBR IR =1mA 5.5 7 9 V IRM VRM = 3.3 V per line 500 nA RI/O I=10mA 80 100 120 Ω Cline VR =2.5 V,F=1 MHz, 30 mV (on filter cells) 50 60 70 pF |
Similar Part No. - EMIF04-10006F1 |
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Similar Description - EMIF04-10006F1 |
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