ABSOLUTEMAXIMUMRATINGS

(25°C unless otherwise specified)

Storage Temperature

-55°C to + 150°C

Operating Temperature

-55°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUTDIODE

Forward Current

50mA

Reverse Voltage

6V

Power Dissipation

70mW

OUTPUTTRANSISTOR

Collector-emitter Voltage BV

CEO

35V

Emitter-collector Voltage BV

ECO

6V

Collector Current

80mA

Power Dissipation

150mW

POWERDISSIPATION

Total Power Dissipation

170mW

(derate linearly 2.26mW/°C above 25°C)

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V

1.2

1.4

V

I

Reverse Current (I

10

µA

V

Output

Collector-emitter Breakdown (BV

35

V

I

Emitter-collector Breakdown (BV

6

V

I

Collector-emitter Dark Current (I

1

uA

V

Coupled

Current Transfer Ratio (CTR)

600

7500

%

1mA I

Collector-emitterSaturationVoltageV

CE (SAT)

1

V

20mA I

Input to Output Isolation Voltage V

ISO

3750

V

RMS

See note 1

5300

V

PK

See note 1

Input-outputIsolationResistanceR

ISO

Ω

V

Output Rise Time

tr

4

18

µs

V

Output Fall Time

tf

3

18

µs

I

ELECTRICAL CHARACTERISTICS ( T

Note 1

Measured with input leads shorted together and output leads shorted together.

DB92859l-AAS/A5

29/8/07