FCPF250N65S3L1 datasheet(2/10 Pages) ONSEMI

Part #	FCPF250N65S3L1

Description	N-Channel SuperFET MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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Semiconductor Components Industries, LLC, 2017

Publication Order Number:

May, 2017, Rev. 1.0

FCPF250N65S3L1/D

1

FCPF250N65S3L1

N-Channel SuperFET® III MOSFET

650 V, 12 A, 250 m

Ω

Features

• 700 V @ TJ = 150 oC

•Typ. RDS(on) = 210 mΩ

• Ultra Low Gate Charge (Typ. Qg = 24 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)

• 100% Avalanche Tested

• RoHS Compliant

Applications

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Industrial Power Supplies

Description

SuperFET® III MOSFET is ON Semiconductor’s brand-new

high voltage super-junction (SJ) MOSFET family that is utilizing

charge balance technology for outstanding low on-resistance

and lower gate charge performance. This advanced technology

is tailored to minimize conduction loss, provide superior

switching performance, and withstand extreme dv/dt rate.

Consequently, SuperFET III MOSFET is very suitable for

various power system for miniaturization and higher efficiency.

TO-220F

G

DS

G

S

D

Absolute Maximum Ratings T

C = 25

oC unless otherwise noted.

Thermal Characteristics

Symbol

Parameter

FCPF250N65S3L1

Unit

VDSS

Drain to Source Voltage

650

V

VGSS

Gate to Source Voltage

- DC

±30

V

- AC

(f > 1 Hz)

±30

V

ID

Drain Current

- Continuous (TC = 25oC)

12*

A

- Continuous (TC = 100oC)

7.6*

IDM

Drain Current

- Pulsed

(Note 1)

30*

A

EAS

Single Pulsed Avalanche Energy

(Note 2)

57

mJ

IAS

Avalanche Current

(Note 1)

2.3

A

EAR

Repetitive Avalanche Energy

(Note 1)

0.31

mJ

dv/dt

MOSFET dv/dt

100

V/ns

Peak Diode Recovery dv/dt

(Note 3)

20

PD

Power Dissipation

(TC = 25oC)

31

W

- Derate Above 25oC0.25

W/oC

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

oC

TL

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

oC

Symbol

Parameter

FCPF250N65S3L1

Unit

RθJC

Thermal Resistance, Junction to Case, Max.

4.07

oC/W

RθJA

Thermal Resistance, Junction to Ambient, Max.

62.5

*Drain current limited by maximum junction temperature

.

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