S e miconductor Compone nts Indus trie s , LLC, 2017

www.fa irchilds e mi.com

FGH75T65S QDT

www.ons e mi.com

1

FGH75T65SQDT

650 V, 75 A Field Stop Trench IGBT

Features

• Positive Temperature Co-efficient for Easy Parallel Operating

• High Current Capability

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• RoHS Compliant

General Description

Using novel field stop IGBT technology, ON semiconductor’s

performance for solar inverter, UPS, welder, telecom, ESS and

PFC applications where low conduction and switching losses

are essential.

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

Absolute Maximum Ratings

Symbol

Description

Unit

Collector to Emitter Voltage

650

V

Gate to Emitter Voltage

 20

V

Transient Gate to Emitter Voltage

30

V

Collector Current

150

A

Collector Current

75

A

Pulsed Collector Current

300

A

Pulsed Collector Current

300

A

Diode Forward Current

150

A

Diode Forward Current

75

A

Pulsed Diode Maximum Forward Current

300

A

Maximum Power Dissipation

375

W

Maximum Power Dissipation

188

W

Operating Junction Temperature

-55 to +175

Storage Temperature Range

-55 to +175

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

Notes:

1. Due to system integration constraints between Fairchild and ON semiconductor, as of November 1, 2017 any product part number with a underscore will be replaced with a

dash. This is a notification.

3. Repetitive rating: Pulse width limited by max. junction temperature

COLLECTOR

(FLANGE)

E

C

G

G

E

C

June 2017