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IRHN3150 Datasheet(PDF) 5 Page - International Rectifier |
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IRHN3150 Datasheet(HTML) 5 Page - International Rectifier |
5 / 12 page www.irf.com 5 Pre-Irradiation IRHN7150, JANSR2N7268U Post-Irradiation Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation Fig 9. High Dose Rate (Gamma Dot) Test Circuit Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation |
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