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HYR1812820G-745 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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HYR1812820G-745 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 14 page HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules INFINEON Technologies 9 7.00 1) The table below shows the number of RDRAM devices contained in a RIMM module of listed memory storage capacity . Absolute Maximum Ratings Symbol Parameter Limit Values Unit min. max. V I,ABS Voltage applied to any RSL or CMOS signal pad with respect to GND – 0.3 V DD +0.3 V V DD,ABS Voltage on V DD with respect to GND – 0.5 V DD +1.0 V T STORE Storage temperature – 50 100 °C DC Recommended Electrical Conditions Symbol Parameter and Conditions Limit Values Unit min. max. V DD Supply voltage 2.50 – 0.13 2.50 + 0.13 V V CMOS CMOS I/O power supply at pad for 2.5 V controllers: CMOS I/O power supply at pad for 1.8 V controllers: 2.5 – 0.13 1.8 – 0.1 2.5 + 0.25 1.8 + 0.2 V V V REF Reference voltage 1.4 – 0.2 1.4 + 0.2 V V IL RSL input low voltage V REF – 0.5 V REF – 0.2 V V IH RSL input high voltage V REF +0.2 V REF +0.5 V V IL,CMOS CMOS input low voltage – 0.3 0.5 V CMOS – 0.25 V V IH,CMOS CMOS input high voltage 0.5 V CMOS +0.25 V CMOS +0.7 V V OL,CMOS CMOS output low voltage @ I OL,CMOS =1 mA – 0.3 V V OH,CMOS CMOS output high voltage @ I OH,CMOS = – 0.25 mA V CMOS – 0.3 – V I REF V REF current @ VREF,MAX – 10 × no. RDRAMs 1) 10 × no. RDRAMs 1) µA I SCK,CMD CMOS input leakage current @ (0 ≤ V CMOS ≤ VDD) – 10 × no. RDRAMs 1) 10 × no. RDRAMs 1) µA I SIN,SOUT CMOS input leakage current @ (0 ≤ V CMOS ≤ VDD) – 10.0 10.0 µA RIMM Module Capacity 64/72 MB 128/144 MB 256/288 MB Number of 144 Mbit RDRAM devices 4 8 16 |
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