JCS6N90BH-O-B-N-B datasheet(4/11 Pages) JSMC

Part #	JCS6N90BH-O-B-N-B

Description	Low gate charge

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Manufacturer	JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]

Direct Link	http://www.hwdz.com.cn

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4 / 11 page

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JCS6N90H

版本：201510C

4/11

电特性

ELECTRICAL CHARACTERISTICS

热特性

THERMAL CHARACTERISTIC

开关特性

Switching Characteristics

延迟时间

Turn-On delay time

td(on)

VDD=450V,ID=6A,RG=25Ω

（

note 4，5）

-

34

75

ns

上升时间

Turn-On rise time

tr

-

85 155

ns

延迟时间

Turn-Off delay time

td(off)

-

56 113

ns

下降时间

Turn-Off Fall time

tf

-

59 118

ns

栅极电荷总量

Total Gate Charge

Qg

VDS =720V ,

ID=6A

VGS =10V

（

note 4，5）

-

14

19

nC

栅－源电荷

Gate-Source charge

Qgs

-

5

-

nC

栅－漏电荷

Gate-Drain charge

Qgd

-

6

-

nC

漏－源二极管特性及最大额定值

Drain-Source Diode Characteristics and Maximum Ratings

正向最大连续电流

Maximum Continuous Drain

-Source Diode Forward Current

IS

-

6

A

正向最大脉冲电流

Maximum Pulsed Drain-Source

Diode Forward Current

ISM

-

24

A

正向压降

Drain-Source Diode Forward

Voltage

VSD

VGS=0V,

IS=6A

-

1.4

V

反向恢复时间

Reverse recovery time

trr

VGS=0V, IS=6A

dIF/dt=100A/μs

(note 4)

-

625

-

ns

反向恢复电荷

Reverse recovery charge

Qrr

-

6.71

-

μC

项

目

Parameter

符

号

Symbol

最大

Max

单

位

Unit

JCS6N90CH/BH

JCS6N90FH

结到管壳的热阻

Thermal Resistance, Junction to Case

Rth(j-c)

0.78

2.3

℃

/W

结到环境的热阻

Thermal Resistance, Junction to Ambient

Rth(j-A)

62.5

℃

/W

注释：

1：脉冲宽度由最高结温限制

2：L=2.0mH, IAS=6A, VDD=50V, RG=25 Ω,起始结温

TJ=25℃

3：ISD ≤6A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温

TJ=25℃

4：脉冲测试：脉冲宽度≤300μs,占空比≤2％

5：基本与工作温度无关

Notes:

1：Pulse width limited by maximum junction

temperature

2：L=2.0mH, IAS=6A, VDD=50V, RG=25 Ω,Starting

TJ=25℃

3：ISD ≤6A,di/dt ≤200A/μs,VDD≤BVDSS, Starting

TJ=25℃

4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％

5：Essentially independent of operating temperature

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