JCS7HN65RC-O-R-N-B datasheet(3/18 Pages) JSMC

Part #	JCS7HN65RC-O-R-N-B

Description	Low gate charge

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Manufacturer	JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]

Direct Link	http://www.hwdz.com.cn

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3 / 18 page

R

JCS7HN65C

版本：201604I

3/18

电特性 ELECTRICAL CHARACTERISTICS

项

目

Parameter

符

号

Symbol

测试条件

Tests conditions

最小

Min

典型

Typ

最大

Max

单位

Units

关态特性 Off –Characteristics

漏－源击穿电压

Drain-Source Voltage

BVDSS

ID=250μA, VGS=0V

650

-

V

击穿电压温度特性

Breakdown Voltage Temperature

Coefficient

ΔBVDSS/Δ

TJ

ID=250μA, referenced to

25℃

-

0.64

-

V/℃

VDS=650V,VGS=0V,

TC=25℃

-

10

μA

零栅压下漏极漏电流

Zero Gate Voltage Drain Current

IDSS

VDS=520V,

TC=125℃

-

100 μA

正向栅极体漏电流

Gate-body leakage current,

forward

IGSSF

VDS=0V, VGS =30V

-

100 nA

反向栅极体漏电流

Gate-body leakage current,

reverse

IGSSR

VDS=0V, VGS =-30V

-

-100 nA

通态特性 On-Characteristics

阈值电压

Gate Threshold Voltage

VGS(th)

VDS = VGS , ID=250μA

2.0

-

4.0

V

静态导通电阻

Static Drain-Source

On-Resistance

RDS(ON)

VGS =10V , ID=3.5A

-

1.05 1.35

Ω

正向跨导

Forward Transconductance

gfs

VDS = 40V, ID=7.0A（note 4） -

5.6

-

S

动态特性 Dynamic Characteristics

输入电容

Input capacitance

Ciss

-

1100 1600 pF

输出电容

Output capacitance

Coss

-

251 300

pF

反向传输电容

Reverse transfer capacitance

Crss

VDS=25V,

VGS =0V,

f=1.0MHZ

-

14

20

pF

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JCS7HN65RC-O-R-N-B Datasheet(PDF) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS7HN65RC-O-R-N-B Datasheet(HTML) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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