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JCS12N60CC-R-C-N-B Datasheet(PDF) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Part # JCS12N60CC-R-C-N-B
Description  N-CHANNEL MOSFET
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Manufacturer  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Direct Link  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS12N60CC-R-C-N-B Datasheet(HTML) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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JCS12N60C
版本：201703A
3/12
项
目
Parameter
符
号
Symbol
测试条件
Tests conditions
最小
Min
典型
Typ
最大
Max
单位
Units
关态特性 Off
–Characteristics
漏－源击穿电压
Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
600
-
-
V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBV
DSS/Δ
TJ
ID=250μA, referenced to
25℃
-
0.5
-
V/℃
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
VDS=600V,VGS=0V,
TC=25℃
-
-
1
μA
VDS=480V,
TC=125℃
-
-
10
μA
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
-
-
100
nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
-
-
-100
nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0
-
4.0
V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=6A
-
0.45 0.62
Ω
正向跨导
Forward Transconductance
gfs
VDS = 40V, ID=6A（note 4）
-
13
-
S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
VDS=25V,
VGS =0V,
f=1.0MHZ
-
1500 2100
pF
输出电容
Output capacitance
Coss
-
160
-
pF
反向传输电容
Reverse transfer capacitance
Crss
-
20
-
pF


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