K1S3216B1C-I datasheet(6/10 Pages) SAMSUNG

Part #	K1S3216B1C-I

Description	2Mx16 bit Uni-Transistor Random Access Memory

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 10 page

Revision 0.1

June 2003

K1S3216B1C

- 6 -

UtRAM

Preliminary

AC OPERATING CONDITIONS

TEST CONDITIONS(Test Load and Test Input/Output Reference)

Input pulse level: 0.2 to Vcc-0.2V

Input rising and falling time: 5ns

Input and output reference voltage: 0.5 x VCC

Output load (See right): CL=50pF

CL

1. Including scope and jig capacitance

Dout

AC CHARACTERISTICS(Vcc=1.7~2.1V, TA=-40 to 85

°C)

1. tWP(min)=70ns for continuous write operation over 50 times.

Parameter List

Symbol

Speed Bins

Units

70ns

85ns

Min

Max

Min

Max

Read

Read Cycle Time

tRC

70

-

85

-

ns

Address Access Time

tAA

-

70

-

85

ns

Chip Select to Output

tCO

-

70

-

85

ns

Output Enable to Valid Output

tOE

-

35

-

40

ns

UB, LB Access Time

tBA

-

70

-

85

ns

Chip Select to Low-Z Output

tLZ

10

-

10

-

ns

UB, LB Enable to Low-Z Output

tBLZ

10

-

10

-

ns

Output Enable to Low-Z Output

tOLZ

5

-

5

-

ns

Chip Disable to High-Z Output

tHZ

0

25

0

25

ns

UB, LB Disable to High-Z Output

tBHZ

0

25

0

25

ns

Output Disable to High-Z Output

tOHZ

0

25

0

25

ns

Output Hold from Address Change

tOH

5

-

5

-

ns

Write

Write Cycle Time

tWC

70

-

85

-

ns

Chip Select to End of Write

tCW

60

-

70

-

ns

Address Set-up Time

tAS

0

-

0

-

ns

Address Valid to End of Write

tAW

60

-

70

-

ns

UB, LB Valid to End of Write

tBW

60

-

70

-

ns

Write Pulse Width

tWP

551)

-

601)

-

ns

Write Recovery Time

tWR

0

-

0

-

ns

Write to Output High-Z

tWHZ

0

25

0

25

ns

Data to Write Time Overlap

tDW

30

-

35

-

ns

Data Hold from Write Time

tDH

0

-

0

-

ns

End Write to Output Low-Z

tOW

5

-

5

-

ns

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